The effect of the etching process on the morphology and photoluminescence of porous amorphous SiC

Tóm tắt

Abstract Porous amorphous silicon carbide (P-aSiC) was prepared by an electrochemical etching method. The surface morphology of the samples was measured by an atomic force microscope (AFM). Photoluminescence (PL) and PL excitation spectra of the samples were measured at room temperature. We observed clear dependence of PL spectra and morphology on fabrication conditions. Based on these results, we propose the emitting mechanism of the PL from the samples.

Từ khoá

Keywords: indirect gap semiconductor, SiC, quantum confinement

Tài liệu tham khảo

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