Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations

Tóm tắt

One of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si1−xGex (100) (x = 0–1) with atomically flat surfaces and interfaces on Si(100) is achieved. Self-limiting formation of 1–3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si1−xGex (100) are generalized based on the Langmuir-type model. By the Si epitaxial growth on top of the material already-formed on Si(100), N, B and C atoms are confined within about a 1 nm thick layer. In Si cap layer growth on the P atomic layer formed on Si1−xGex (100), segregation of P atoms is suppressed by using Si2H6 instead of SiH4 at a low temperature of 450 ◦C. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the Si1−xGex/Si heterointerface. It is confirmed that higher carrier concentration and higher carrier mobility are achieved by atomic-layer doping. These results open the way to atomically controlled technology for ULSIs

Từ khoá

Keywords: atomically controlled processing, chemical vapor deposition, silicon, germanium, ULSI

Tài liệu tham khảo

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1. Carlos JRP Augusto, Lynn Forester. Novel Si–Ge–C superlattices and their applications in Solid-State Electronics (Vol. 110, 2015)
2. Junichi Murota, Vinh Le Thanh. Atomic-order thermal nitridation of group IV semiconductors for ultra-large-scale integration in Advances in Natural Sciences: Nanoscience and Nanotechnology (Vol. 6, No. 1, 2014)
3. Junichi Murota, Masao Sakuraba, Bernd Tillack. Atomically controlled CVD technology of group IV semiconductors for ultralarge scale integration in 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (2012)
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